An Novel Thin Layer SOI copyright-Stored Trench LIGBT With Enhanced Emitter Injection

An Novel Thin Layer SOI copyright-Stored Trench LIGBT With Enhanced Emitter Injection

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An novel thin layer SOI copyright-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed.The potential of the P-shield layer is clamped by two series-connected diodes.Therefore, the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the off-state.Thus, the doping concentration of the copyright-stored layer (Ncs) can be significantly improved without compromising the breakdown voltage.Hence, an ultra-low on-state voltage drop (Von) can be obtained.

Besides, the two hbl5266ca series-connected diodes clamp the drain-to-source voltage of the intrinsic n-MOS in the TLIGBT, which leads to an ultra-low saturation current and improves the short-circuit withstand capability.The simulation results indicate that the turn-off loss (Eoff) at Von = 1.37 V is reduced by 28.8% and 21% compared with those of the conventional copyright-stored LIGBT A cubs foam finger and LIGBT B, respectively.Moreover, the saturation current density is reduced by over 53.

3% and the short circuit withstand time is improved by more than 2 times than those of the conventional and state-of-the-arts.